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--- hw3 [2016/04/16 10:24] – [Journal reading (5 pts)] janet
+++ hw3 [2020/03/06 09:14] (current) – external edit 127.0.0.1
@@ Line 21: / Line 21: @@
 $$R = {h \over {2{e^2}}}{L \over {{\ell _{ph}}}}$$
-**c)** Show that the the above result is equivalent to the Drude formula, within a factor of 2, if we assume a free electron dispersion relation $E = {{{\hbar ^2}{k^2}} \over {2m}}$.
+**c)** Show that the above result is equivalent to the Drude formula, within a factor of 2, if we assume a free electron dispersion relation $E = {{{\hbar ^2}{k^2}} \over {2m}}$.
 $${\rho _{1d}} = {m \over {{n_{1d}}{e^2}{\tau _{e - ph}}}}$$
@@ Line 54: / Line 54: @@
 Articles
-Monte-Carlo simulation of nano-collected current from a silicon sample containing a linear arrangement of uncapped nanocrystals , Mohammed Ledra and Abdelillah El Hdiy J. Appl. Phys. 118, 115705 (2015);
+  * Monte-Carlo simulation of nano-collected current from a silicon sample containing a linear arrangement of uncapped nanocrystals , Mohammed Ledra and Abdelillah El Hdiy J. Appl. Phys. 118, 115705 (2015);
-Picosecond photoresponse in van der Waals heterostructures, M. Massicotte et al. Nature Nanotechnology 11, 42–46 (2016) doi:10.1038/nnano.2015.227.
+  * Picosecond photoresponse in van der Waals heterostructures, M. Massicotte et al. Nature Nanotechnology 11, 42–46 (2016) doi:10.1038/nnano.2015.227.
-Determination of band alignment in the single-layer MoS2/WSe2 heterojunction,  Ming-Hui Chiu, et al., Nature Communications 6, 7666, doi:10.1038/ncomms8666
+  * Determination of band alignment in the single-layer MoS2/WSe2 heterojunction,  Ming-Hui Chiu, et al., Nature Communications 6, 7666, doi:10.1038/ncomms8666
-Electron-Phonon Coupling and Energy Flow in a Simple Metal beyond the Two-Temperature Approximation, Lutz Waldecker, Roman Bertoni, Ralph Ernstorfer, and Jan Vorberger, PHYSICAL REVIEW X 6, 021003; (2016)
+  * Electron-Phonon Coupling and Energy Flow in a Simple Metal beyond the Two-Temperature Approximation, Lutz Waldecker, Roman Bertoni, Ralph Ernstorfer, and Jan Vorberger, PHYSICAL REVIEW X 6, 021003; (2016)
-The Valley Hall effect in MoS2 transistors. K. F. Mak et al Science 344, pp. 1489-1492 (2014) DOI: 10.1126/science.1250140
+  * The Valley Hall effect in MoS2 transistors. K. F. Mak et al Science 344, pp. 1489-1492 (2014) DOI: 10.1126/science.1250140